Field effect transistor and method of manufacturin

专利名称：Field effect transistor and method of

manufacturing the same

发明人：Tanimoto, Masashi申请号：EP05292446.1申请日：20051118公开号：EP1659622B1公开日：20161019

摘要：A field effect transistor includes an i-type first semiconductor layer and asecond semiconductor layer that is formed on the first semiconductor layer and the bandgap energy of that is higher in magnitude than that of the first semiconductor layer. Thefirst semiconductor layer and second semiconductor layer are each made of a galliumnitride-based compound semiconductor layer. A gate electrode (36) is formed on thesecond semiconductor layer; and a second electrode (39) is formed on the first

semiconductor layer. Thus, the field effect transistor is constructed in such a manner asthe first semiconductor layer and second semiconductor layer are interposed betweenthe gate electrode (36) and the second electrode (39). By constructing like this, it ispossible to discharge the holes that are accumulated in the channel from the elementalstructure and to improve the withstand voltage of the field effect transistor.

申请人：NICHIA CORP

地址：JP

国籍：JP

代理机构：Desormiere, Pierre-Louis

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