BCP55资料

BCP55/56

MEDIUM POWER AMPLIFIER

ADVANCE DATA

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SILICON EPITAXIAL PLANAR NPNTRANSISTORS

MINIATURE PLASTIC PACKAGE FORAPPLICATION IN SURFACE MOUNTINGCIRCUITS

GENERAL PURPOSE MAINLY INTENDEDFOR USE IN MEDIUM POWER INDUSTRIALAPPLICATION AND FOR AUDIO AMPLIFIEROUTPUT STAGE

PNP COMPLEMENTS ARE BCP52 ANDBCP53 RESPECTIVELY

2231SOT-223

INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS

SymbolVCBOVCEOVCERVEBOICICMIBIBMPtotTstgTjParameterBCP55Collector-Base Voltage (IE = 0)Collector-Emitter Voltage (IB = 0)Collector-Emitter Voltage (RBE = 1KΩ)Emitter-Base Voltage (IC = 0)Collector CurrentCollector Peak Current (tp < 5 ms)Base CurrentBase Peak Current (tp < ms)Total Dissipation at Tc = 25 CStorage TemperatureMax. Operating Junction TemperatureoValueBCP5610080100511.50.10.22-65 to 150150606060UnitVVVVAAAAWooCCOctober 19971/4

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BCP55/56

THERMAL DATA

Rthj-amb •Rthj-tab • Thermal Resistance Junction-Ambient MaxThermal Resistance Junction-Collecor Tab Max62.58ooC/WC/W• Mounted on a ceramic substrate area = 30 x 35 x 0.7 mmELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

SymbolICBOV(BR)CBOParameterCollector Cut-offCurrent (IE = 0)Collector-BaseBreakdown Voltage (IE = 0)Test ConditionsVCB = 30 VVCB = 30 V Tj = 125 oCIC = 100 µAfor BCP55for BCP56 IC = 20 mAfor BCP55for BCP56 IC = 100 µAfor BCP55for BCP56 IC = 10 µA 601006080601005Min.Typ.Max.10010UnitnAµAVVVVVVVV(BR)CEO∗Collector-EmitterBreakdown Voltage(IB = 0)V(BR)CERCollector-EmitterBreakdown Voltage(RBE = 1 KΩ)Emitter-BaseBreakdown Voltage(IC = 0)Collector-EmitterSaturation VoltageBase-Emitter OnVoltageDC Current GainV(BR)EBOVCE(sat)∗VBE(on)∗hFE∗IC = 500 mA IB = 50 mAIC = 500 mA VCE = 2 VIC = 5 mA VCE = 2 VIC = 150 mA VCE = 2 V for Gr. 6IC = 150 mA VCE = 2 V for Gr. 10IC = 150 mA VCE = 2 V for Gr. 16IC = 500 mA VCE = 2 V IC = 10 mA VCE = 5 V f = 35 MHz254063100251300.51VV100160250MHzfTTransition Frequency∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %2/4

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BCP55/56

SOT-223 MECHANICAL DATAmmMIN.abcde1e4fgl1l2L2.90.676.73.56.330.773.56.52.274.570.20.631.5TYP.2.34.60.40.651.6MAX.2.334.630.60.671.70.323.10.737.33.76.7114.226.4263.8137.8248118.127.6275.6137.8255.9MIN.89.4179.97.924.859.1milsTYP.90.6181.115.725.663MAX.91.7182.323.626.466.912.6122.128.7287.4145.7263.8DIM.Ll2e1abfdce4Cl1BCEgP008B3/4

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BCP55/56

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for theconsequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Nolicense is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentionedin this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without expresswritten approval of SGS-THOMSON Microelectonics.© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights ReservedSGS-THOMSON Microelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 4/4